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VLMRY3420
Vishay Semiconductors
Bicolor SMD LED PLCC-4
FEATURES * SMD LED with exceptional brightness * Multicolored * Luminous intensity categorized e3 * EIA and ICE standard package * Compatible with automatic placement equipment * Compatible with IR reflow, vapor phase and wave soldering processes according to CECC 00802 and J-STD-020C * Available in 8 mm tape * Low profile package * Non-diffused lens: excellent for coupling to light pipes and backlighting * Low power consumption * Luminous intensity ratio in one packaging unit IVmax/IVmin 1.6 * Lead (Pb)-free device * Preconditioning: according to JEDEC level 2a * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC * ESD-withstand voltage: up to 2 kV according to JESD22-A114-B APPLICATIONS * Automotive: backlighting in dashboards and switches * Telecommunication: indicator and backlighting in telephone and fax * Indicator and backlight in office equipment * Flat backlight for LCDs, switches and symbols * General use
19211
DESCRIPTION These devices have been designed to meet the increasing demand for surface mounting technology. The package of the VLMRY3420 is the PLCC-4. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. This SMD device consists of a amber and yellow chip. So it is possible to choose the color in one device. PRODUCT GROUP AND PACKAGE DATA * Product group: LED * Package: SMD PLCC-4 * Product series: bicolor * Angle of half intensity: 60 PARTS TABLE
PART VLMRY3420-GS08 VLMRY3420-GS18
COLOR, LUMINOUS INTENSITY Amber, IV = (355 to 900) mcd Yellow, IV = (560 to 1120) mcd Amber, IV = (355 to 900) mcd Yellow, IV = (560 to 1120) mcd
TECHNOLOGY AlInGaP on GaAs AlInGaP on GaAs
Document Number 81304 Rev. 1.2, 06-Sep-07
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VLMRY3420
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1) VLMRY3420
PARAMETER Reverse voltage per diode2) DC Forward current per diode Surge forward current per diode Power dissipation per diode Junction temperature Operating temperature range Storage temperature range Thermal resistance junction/ ambient mounted on PC board (pad size > 16 mm2) 1 chip on 2 chips on TEST CONDITION IR = 10 A Tamb 65 C SYMBOL VR IF IFSM PV Tj Tamb Tstg RthJA VALUE 5 50 0.1 130 125 - 40 to + 100 - 40 to + 100 480 650 UNIT V mA A mW C C C K/W
Note: 1) Tamb = 25 C, unless otherwise specified 2) Driving the LED in reverse direction is suitable for short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMRY3420, AMBER
PARAMETER Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse current Junction capacitance Note: 1) Tamb = 25 C, unless otherwise specified TEST CONDITION IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V, VR = 0, f = 1 MHz PART VLMRY3420 SYMBOL IV d p VF IR Cj 15 MIN 355 617 624 60 2.1 2.6 10 TYP. MAX 900 UNIT mcd nm nm deg V A pF
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMRY3420, YELLOW
PARAMETER Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse current Junction capacitance TEST CONDITION IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V VR = 0, f = 1 MHz PART VLMRY3420 SYMBOL IV d p VF IR Cj 15 MIN 560 581 588 590 60 2.1 2.6 10 TYP. MAX 1120 594 UNIT mcd nm nm deg V A pF
CROSSING TABLE
VISHAY VLMRY3420 OSRAM LAYT67B
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Document Number 81304 Rev. 1.2, 06-Sep-07
VLMRY3420
Vishay Semiconductors
LUMINOUS INTENSITY CLASSIFICATION AND GROUP COMBINATIONS, VLMRY34201)
RED T2 355 to 450 mcd Y E L L O W
1)
U1 450 to 560 mcd VLMRY3420 VLMRY3420 VLMRY3420
U2 560 to 710 mcd VLMRY3420 VLMRY3420 VLMRY3420
V1 710 to 900 mcd VLMRY3420 VLMRY3420 VLMRY3420
U2 560 to 710 mcd V1 710 to 900 mcd V2 900 to 1120 mcd
VLMRY3420 VLMRY3420 VLMRY3420
Note: Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %.
COLOR CLASSIFICATION
DOMINANT WAVELENGTH (NM) GROUP MIN 1 2 3 4 5 6 581 583 585 587 589 591 YELLOW MAX 584 586 588 590 592 594
TYPICAL CHARACTERISTICS Tamb = 25 C, unless otherwise specified
60 IF -Forward Current (mA) 50 40 2 chips on 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100 110 120
20087
0.12 0.10 0.08 0.06 0.04 0.02 for one chip operation only 101 102 tp/T = 0.005 0.05 0.5
1 chip on
Tam b -Ambient Temperature (C)
0.00 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 20085 tp - Pulse Length (s)
Figure 1. Forward Current vs. Ambient Temperature
Document Number 81304 Rev. 1.2, 06-Sep-07
I F - Forward Current (A)
Figure 2. Forward Current vs. Pulse Duration
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VLMRY3420
Vishay Semiconductors
0
10
20 30
IV rel - Relative Luminous Intensity
100 90 I F - Forward Current (mA) 80 70 60 50 40 30 20 10 0 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 V F - Forward Voltage (V) amber yellow
40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6
95 10319
20170
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Figure 6. Relative Forward Voltage vs. Ambient Temperature
1.2
10 IV rel - Relative Luminous Intensity
yellow
IV rel - Relative Luminous Intensity
yellow
1.0 0.8 0.6 0.4 0.2 0.0 540
1
0.1
0.01
560 580 600 620 640
17018
1
10 IF - Forward Current (mA)
100
16008
- Wavelength (nm)
Figure 4. Relative Intensity vs. Wavelength
Figure 7. Relative Luminous Intensity vs. Forward Current
1.2
10.00 I Vrel - Relative Luminous Intensity Amber Amber
I Vrel - Relative Luminous Intensity
1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
1.00
0.10
570 580 590 600 610 620 630 640 650 660 670
20171
0.01 1.00
20172
10.00 IF - Forward Current (mA)
100.00
- Wavelength (nm)
Figure 5. Relative Intensity vs. Wavelength
Figure 8. Relative Luminous Intensity vs. Forward Current
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Document Number 81304 Rev. 1.2, 06-Sep-07
VLMRY3420
Vishay Semiconductors
- Change of Dom. Wavelength (nm)
2.5 IV rel - Relative Luminous Intensity yellow 2.0 1.5 1.0 0.5 0.0 - 50
17016
6 Amber 4 2 0 -2 -4 -6 - 50
- 25
0 25 50 75 Tamb - Ambient Temperature (C)
100
d
20173
- 25 0 25 50 75 100 Tamb - Ambient Temperature (C)
Figure 9. Rel. Luminous Intensity vs. Ambient Temperature
Figure 12. Change of Dominant Wavelength vs. Ambient Temperature
VF - Change of Forward Voltage (mV)
2.5
250 200 150 100 50 0 - 50 - 100 - 150 - 200 - 50 - 25 0 25 50 75 Tamb - Ambient Temperature (C) 100
I Vrel -Relative Luminous Intensity
Amber 2.0 1.5 1.0 0.5 0.0 - 50
30 mA 50 mA yellow
10 mA
20174
- 25 0 25 50 75 Tamb - Ambient Temperature (C)
100
17015
Figure 10. Rel. Luminous Intensity vs. Ambient Temperature
Figure 13. Change of Forward Voltage vs. Ambient Temperature
- Change of Dom. Wavelength (nm)
yellow
4 2 0 -2 -4 -6 - 50
VF - Change of Forward Voltage (mV)
6
250 200 150 100 50 0 - 50 - 100 - 150 - 200 - 50 - 25 0 25 50 75 Tamb - Ambient Temperature (C) 100 10 mA 30 mA 50 mA Amber
d
17017
- 25 0 25 50 75 Tamb - Ambient Temperature (C)
100
20175
Figure 11. Change of Dominant Wavelength vs. Ambient Temperature
Figure 14. Change of Forward Voltage vs. Ambient Temperature
Document Number 81304 Rev. 1.2, 06-Sep-07
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VLMRY3420
Vishay Semiconductors
PACKAGE DIMENSIONS
Mounting Pad Layout
4 1.2 2.6 (2.8) 0.5 1.6 (1.9) area covered with solder resist Dimensions: IR and Vaporphase (Wave Soldering)
19899
METHOD OF TAPING/POLARITY AND TAPE AND REEL TAPING OF VLM.3... SMD LED (VLM.3 - SERIES) Vishay's LEDs in SMD packages are available in an 3.5 antistatic 8 mm blister tape (in accordance with 3.1 DIN IEC 40 (CO) 564) for automatic component insertion. The blister tape is a plastic strip with impressed component cavities, covered by a top tape.
4
2.2 2.0
5.75 5.25 3.6 3.4
1.85 1.65
4.0 3.6 8.3 7.7
Adhesive Tape
1.6 1.4 4.1 3.9
2.05 1.95
4.1 3.9
0.25
Blister Tape
94 8668
Figure 15. Tape Dimensions in mm for PLCC-2
Component Cavity
94 8670
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Document Number 81304 Rev. 1.2, 06-Sep-07
VLMRY3420
Vishay Semiconductors
REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS08 (= 1500 PCS.) REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS18 (= 8000 PCS.) PREFERRED
120
10.0 9.0
120
10.4 8.4
4.5 3.5 2.5 1.5
13.00 12.75 63.5 60.5
4.5 3.5 2.5 1.5
13.00 12.75 62.5 60.0
Identification Label: Vishay Type Group Tape Code Production Code Quantity
Identification Label: Vishay Type Group Tape Code Production Code Quantity
180 178
14.4 max.
94 8665
321 329
14.4 max.
18857
Figure 16. Reel Dimensions - GS08
Figure 17. Reel Dimensions - GS18
SOLDERING PROFILE
IR Reflow Soldering Profile for lead (Pb)-free soldering
Preconditioning acc. to JEDEC Level 2a
300
255 C 255C 240 C 217 C max. 260 C 245 C
TTW Soldering 300 250 Temperature (C) 200 150 100 50 0 235 C...260 C first wave ca. 200 K/s 100 C...130 C 5s
(acc. to CECC00802)
948626-1
Lead Temperature second wave ca. 2 K/s full line: typical dotted line: process limits
250 Temperature (C)
200
max. 30 s
150
max. 120 sec max. 100 sec
100
max. Ramp Up 3 C/sec max. Ramp Down 6 C/sec
2 K/s forced cooling 0 50 100 Time (s) 150
ca. 5 K/s
50
0 0
19470-2
200
250
50
100
150 Time (s)
200
250
300
max. 2 cycles allowed
Figure 18. Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020C)
Figure 19. Double Wave Soldering of Opto Devices (all Packages)
Document Number 81304 Rev. 1.2, 06-Sep-07
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VLMRY3420
Vishay Semiconductors
DRY PACKING The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage.
LEVEL This bag contains MOISTURE -SENSITIVE DEVICES
CAUTION
2a
1. Shelf life in sealed bag 12 months at <40C and < 90% relative humidity (RH) 2. After this bag is opened devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. 260C) must be: a) Mounted within 672 hours at factory condition of < 30C/60%RH or b) Stored at <10% RH. 3. Devices require baking before mounting if: a) Humidity Indicator Card is >10% when read at 23C + 5C or b) 2a or 2b is not met. 4. If baking is required, devices may be baked for: 192 hours at 40C + 5C/-0C and <5%RH (dry air/nitrogen) or o or 96 hours at 605 Cand <5%RH For all device containers 24 hours at 1005C Not suitable for reels or tubes
Aluminum bag
Label
Reel
15973
Bag Seal Date: ______________________________ (If blank, see bar code label) Note: LEVEL defined by EIA JEDEC Standard JESD22-A113
19786
Example of JESD22-A112 level 2a label ESD PRECAUTION Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the antistatic shielding bag. Electro-static sensitive devices warning labels are on the packaging. VISHAY SEMICONDUCTORS STANDARD BAR CODE LABELS The Vishay Semiconductors standard bar code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Semiconductors specific data.
FINAL PACKING The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes. RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the aluminium bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: * Storage temperature 10 C to 30 C * Storage humidity 60 % RH max. After more than 672 h under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 h at 40 C + 5 C/ - 0 C and < 5 % RH (dry air/ nitrogen) or 96 h at 60 C + 5 C and < 5 % RH for all device containers or 24 h at 100 C + 5 C not suitable for reel or tubes. An EIA JEDEC standard JESD22-A112 level 2a label is included on all dry bags.
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Document Number 81304 Rev. 1.2, 06-Sep-07
VLMRY3420
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81304 Rev. 1.2, 06-Sep-07
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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